The theoretical and experimental investigations of electrical properties of the Al-SiO2--SiO(ncsSi-2-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO2-()ncsSi--SiO2-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between and SiOncsSi-2 were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics.
